SSS1206H transistors equivalent, n-channel enhancement mode power field effect transistors.
TO-247
* Advanced Process Technology
* Special designed for PWM, load switching and
general purpose applications
* Ultra low on-resistance with low gate ch.
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating t.
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power .
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